| PART |
Description |
Maker |
| LTC1263 LTC1263CS8 1263F |
12V/ 60mA Flash Memory Programming Supply
12V, 60mA Flash Memory Programming Supply
From old datasheet system
|
Linear Technology
|
| PIC18F44K22 PIC18LF25K22 PIC18LF26K22 PIC18LF46K22 |
Flash Memory Programming Specification
|
Microchip Technology
|
| ST662ABD-TR ST662ACD-TR |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
|
ST Microelectronics
|
| ATMEGA162 ATMEGA162L ATMEGA162V |
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz.
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation.
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 1 MIPS throughput at 1 MHz.
|
Atmel
|
| MAX662A |
12V, 30mA Flash Memory Programming Supply(12V,30mA快擦写存储器编程电源,电荷泵电压转换器) 12V30mA闪存存储器编程电
|
Maxim Integrated Products, Inc.
|
| ATMEGA48 ATMEGA168 ATMEGA88 |
4K byte self-programming Flash Program Memory, 512 byte SRAM, 256 Byte EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega48V).
16K Byte self-programming Flash Program Memory, 1K Byte SRAM, 512 Bytes EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega168V).
8K Byte self-programming Flash Program Memory, 1K Byte SRAM, 512 Bytes EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega88V).
|
Atmel
|
| PHT4N10T |
12V, 30mA Flash Memory Programming Supply; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 3.5AI（四）|的SOT - 223
|
Microsemi, Corp.
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
| UNR9216 UNR9213 UNR9215 UNR9214 UNR9210 UNR9211 UN |
Transistors with built-in Resistor
ST72321 - 8-BIT MCU WITH NESTED INTERRUPTS, FLASH,10-BIT ADC, FIVE TIMERS, SPI, SCI, I2C INTERFACE
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
UNR921X Series (UN921X Series) - NPN Transistor with built-in Resistor
DC-DC converter from 5 V to 12 V, 0.03 A for Flash memory programming supply 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 416
|
Matsshita / Panasonic
Panasonic, Corp.
|
| AM29F032B-75 AM29F032B-90EF |
32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:32Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 4M X 8 FLASH 5V PROM, 90 ns, PDSO40
|
Spansion, Inc.
|
| W39V040FA W39V040FAT W39V040FAP W39V040FAQ |
3.3-Volt Flash
NVM > Flash> FWH/LPC Flash Memory
512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE
|
Winbond Electronics
WINBOND[Winbond]
|
| W39V040A W39V040AQ W39V040AP |
3.3-Volt Flash
NVM > Flash> FWH/LPC Flash Memory
512K 】 8 CMOS FLASH MEMORY WITH LPC INTERFACE
|
Winbond Electronics
WINBOND[Winbond]
|
